SiGe nanostructures - F. Schäffler

 

 

M. Grydlik, M. Brehm, T. Tayagaki, G. Langer, O.G. Schmidt, F. Schäffler, "Optical properties of individual site-controlled Ge quantum dots", Appl. Phys. Lett. 106, 251904 (2015); DOI:10.1063/1.4923188 with P12

 

H. Groiss, M. Glaser, A. Marzegalli, F. Isa, G. Isella, L. Miglio, F. Schäffler, "Burgers  Vector Analysis of Vertical Dislocations in Ge Crystals by Large-Angle Convergent Beam Electron Diffraction", Microscopy and Microanalysis 21, 637-645 (2015); DOI:10.1017/S1431927615000537.

 

M. Brehm, M. Grydlik, T. Tayagaki, G. Langer, F. Schäffler O. Schmidt, "Photoluminiscence investigation of strictly ordered Ge dots grown on pit-patterned Si substrates", Nanotechnology 26/22, 225202 (2015); DOI:10.1088/0957-4484/26/22/225202

 

R. Jannesari, M. Schatzl, F. Hackl, M. Glaser, K. Hingerl, T. Fromherz, and F. Schäffler, "Commensurate germanium light emitters in silicon-on-insulator photnoic crystal slabs", Optics Express 22/21, 25426-25435 (2014); DOI: 10.1364/OE.22.025426 with P12

 

H. Groiss, I. Daruka, K. Koike, M. Yano, G. Hesser, G. Springholz, N. Zakharov, P. Werner, F. Schäffler, "Real-time observation of nanoscale topological transitions in epitaxial PbTe/CdTe heterostructures", APL Mat. 2, 012105 (2014); DOI: 10.1063/1.4859775

 

M. Grydlik, M. Brehm, F. Hackl, F. Schäffler, G. Bauer, and T. Fromherz, "Unrolling the evolution kinetics of ordered SiGe islands via Ge surface diffusion", Phys. Rev. B B88B, 115311 (2013) DOI: 10.1103/PhysRevB.88.115311

 

M. Grydlik, G. Langer, T. Fromherz, F. Schäffler and M. Brehm, "Recipes for the fabrication of strictly ordered Ge islands on pit-patterned Si(001) substrates", Nanotechnology 24 (10) 105601, DOI:10.1088/0957-4484/24/10/105601


P. Klenovsky, M. Brehm, V. Krapek, E. Lausecker, D. Munzar, F. Hackl, H. Steiner, T. Fromherz, G. Bauer and J. Humlicek, "Excitation intensity dependence of photoluminescence spectra of SiGe quantum dots grown on prepatterned Si substrates: Evidence for biexcitonic transition",  Phys. Rev. B 86, 115305 (2012) DOI: 10.1103/PhysRevB.86.115305

 

M. Grydlik, F. Boioli, H. Groiss, R. Gatti, M. Brehm, F. Montalenti, B. Devincre, F. Schäffler and L. Miglio, "Misfit dislocation gettering by substrate pit-patterning in SiGe films on Si(001)" Appl. Phys. Lett.101,013119 (2012) DOI: 10.1063/1.4733479  

 

B. Sanduijav, D. Scopece, D. Matei, G. Chen, F. Schäffler, L. Miglio, and G. Springholz, "One-Dimensional to Three-Dimensional Ripple-to-Dome Transition for SiGe on Vicinal Si (1 1 10)"
Phys. Rev. Lett. 109,025505 (2012) DOI: 10.1103/PhysRevLett.109.025505


M. Grydlik, M. Brehm and F. Schäffler, "Morphological evolution of Ge/Si(001) quantum dot rings formed at the rim of wet-etched pits"
Nanoscale Research Lett. 7,601 (2012) DOI: 10.1186/1556-276X-7-601

 

M. Bergamaschini, M. Brehm, M. Grydlik, T. Fromherz,  G. Bauer, F. Montalenti, "Temperature-dependent evolution of the wetting layer thickness during Ge deposition on Si(001)", Nanotechnology 22, 285704/1-8 (2011) DOI: 10.1088/0957-4484/22/28/285704

 

F. Boioli, R. Gatti, M. Grydlik, M. Brehm, F. Montalenti, L. Miglio, "Assessing the delay of plastic relaxation onset in SiGe islands grown on pit-patterned Si(001) substrates", Appl. Phys. Lett. 99, 011106/1-3 (2011) DOI: 10.1063/1.3615285

 

R. Gatti, F. Boioli, M. Grydlik, M. Brehm, H. Groiss, M. Glaser, F. Montalenti, T. Fromherz, F. Schäffler, L. Miglio, "Dislocation engineering in SiGe heteroepitaxial films on patterned Si(001) substrates", Appl. Phys. Lett. 98, 121908/1-3 (2011) DOI: 10.1063/1.3569145

 

G. Chen, G. Springholz, W. Jantsch, F. Schäffler, "Self-aligned fabrication of in-plane SiGe nanowires on rib-patterned Si(001) substrates", Appl. Phys. Lett. 99, 043101/1-3 (2011) DOI: 10.1063/1.3608149

 

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M. Brehm, M. Grydlik, H. Groiss, F. Hackl, F. Schäffler, T. Fromherz and G. Bauer, "The influence of a Si cap on self-organized SiGe islands and the underlying wetting layer", J. Appl. Phys. 109, 123505 (2011) DOI: 10.1063/1.3594693

 

D. Pachinger, H. Groiss, M. Teuchtmann, G. Hesser and F. Schäffler, "Surfactant-mediated Si quantum dot formation on Ge(001)", Appl. Phys. Lett. 98, 223104 (2011) DOI: 10.1063/1.3595486


E. Lausecker, M. Brehm, M. Grydlik, F. Hackl, I. Bergmair, M. Mühlberger, T. Fromherz, F. Schäffler and G. Bauer, "UV nanoimprint lithography for the realization of large-area ordered SiGe/Si(001) island arrays", Appl. Phys. Lett. 98, 143101 (2011) DOI: 10.1063/1.3575554

 

G. Chen, G. Vastola, J. J. Zhang, B. Sanduijav, G. Springholz, W. Jantsch, F. Schäffler, "Enhanced intermixing in Ge nanoprisms on groove-patterned Si(1110) substrates", Appl. Phys. Lett. 98, 023104 (2011) DOI: 10.1063/1.3541788

 

F. Hackl, M. Grydlik, M. Brehm, H. Groiss, F. Schäffler, T. Fromherz, G. Bauer, "Microphotoluminescence and perfect ordering of SiGe islands on pit-patterned Si(001) substrates", Nanotechnol. 22, 165302 (2011) DOI: 10.1088/0957-4484/22/16/165302

 

F. Schäffler, Transport properties of SiGe nanostructures and applications in devices, chapter 15 in SiGe Nanostructures, edited by Y. Shiraki and N. Usami, Woodhead Publishing, Philadelphia, 2011, ISBN 1 84569 689 1, pp. 399–428

 

J. J. Zhang, N. Hrauda, H. Groiss, A. Rastelli, J. Stangl,  F. Schäffler, O. G. Schmidt, G. Bauer, "Strain engineering in Si via closely stacked, site-controlled SiGe islands", Appl. Phys. Lett. 96, 193101/1-3 (2010) DOI: 10.1063/1.3425776

 

J. J. Zhang, F. Montalenti, A. Rastelli, N. Hrauda, D. Scopece, H. Groiss, J. Stangl, F. Pezzoli, F. Schäffler, O. G. Schmidt, L. Miglio, and G. Bauer, "Collective Shape Oscillations of SiGe Islands on Pit-Patterned Si(001) Substrates: A Coherent-Growth Strategy Enabled by Self-Regulated Intermixing", Phys. Rev. Lett. 105, 16, 166102 (2010) DOI: 10.1103/PhysRevLett.105.166102   

 

R. Leitsmann, F. Bechstedt, H. Groiss, F. Schäffler, "Stability of polar semiconductor heterostructures", Phys. Stat. Sol. C 7, 244-247 (2010) DOI: 10.1002/pssc.200982403

 

M. Grydlik, M. Brehm, F. Hackl, H. Groiss, T. Fromherz, F. Schäffler, G. Bauer, "Inverted Ge islands in (111) faceted Si pits - a novel approach towards SiGe islands with higher aspect ratio", New Journal of Physics 12, 063002/1-8 (2010) DOI: 10.1088/1367-2630/12/6/063002

 

H. Detz, A. M. Andrews, M. Nobile, P. Klang, E. Mujagić, G. Hesser, W. Schrenk, F. Schäffler, and G. Strasser, "Intersubband optoelectronics in the InGaAs/GaAsSb material system", J. Vac. Sci. Technol. B 28 C3G19 (2010) DOI: 10.1116/1.3276432

 

G. Chen, E. Wintersberger, G. Vastola, H. Groiss, J. Stangl, W. Jantsch, and F. Schäffler, "Self-assembled Si0.80Ge0.20 nanoripples on Si(1 1 10) substrates", Appl. Phys. Lett. 96, 103107 (2010) DOI: 10.1063/1.3358132

 

M. Brehm, F. Montalenti, M. Grydlik, G. Vastola, H. Lichtenberger, N. Hrauda, M. J. Beck, T. Fromherz, F. Schäffler, L. Miglio, and G. Bauer, "Key role of the wetting layer in revealing the hidden path of Ge/Si(001) Stranski-Krastanow growth onset", Phys. Rev. B 80, 205321 (2009), DOI: 10.1103/PhysRevB.80.205321

 

J. J. Zhang, A. Rastelli, H. Groiss, J. Tersoff, F. Schaffler, O. G. Schmidt, and G. Bauer, "Shaping site-controlled uniform arrays of SiGe/Si(001) islands by in situ annealing", Appl. Phys. Lett. 95, 183102 (2009), DOI: 10.1063/1.3258648

 

E. Kaufmann, T. Schwarzl, H. Groiss, G. Hesser, F. Schäffler, L. Palmetshofer, G. Springholz, W. Heiss, "PbTe and SnTe quantum dot precipitates in a CdTe matrix fabricated by ion implantation", J. Appl. Phys. 106, 043105/1-5 (2009) DOI: 10.1063/1.3204499

 

H. Groiss, G. Hesser, W., Heiss, F. Schäffler, R. Leitsmann, F. Bechstedt, K. Koike, M. Yano, "Coherent (001) interfaces between rocksalt and zinc-blende crystal structures", Physcal Review B 79, 235331/1-6 (2009) DOI: 10.1103/PhysRevB.79.235331

 

T. U. Schülli, G. Vastola, M.-I. Richard, A. Malachias, G. Renaud, F. Uhlik, F. Montalenti, G. Chen, L. Miglio, F. Schäffler, and G. Bauer, "Enhanced Relaxation and Intermixing in Ge Islands Grown on Pit-Patterned Si(001) Substrates", Phys. Rev. Lett. 102, 025502 (2009), DOI: 10.1103/PhysRevLett.102.025502

 

H. Groiss, E.Kaufmann, G. Springholz, T. Schwarzl, G. Hesser, F. Schäffler, W. Heiss, K. Koike, T. Ikatura, T. Hotei, M. Yano and T. Wojtowicz, "Size-controlled quantum dots fabricated by precipitation of epitaxially grown, immiscible semiconductor heterostructures", J. Phys.: Cond. Mat. 20, 454216 (2008) DOI: 10.1088/0953-8984/20/45/454216

 

B. Sanduijav, D. Matei, G. Chen, F. Schäffler, G. Bauer, and G. Springholz, "In situ scanning tunnelling microscopy investigations of Si epitaxial growth on pit-patterned Si (001) substrates", Thin Solid Films 517, 293-296 (2008) DOI: 10.1016/j.tsf.2008.08.120

 

D. Pachinger, H. Lichtenberger, G. Chen, J. Stangl, G. Hesser, and F. Schäffler, "MBE growth conditions for Si island formation on Ge (001) substrates", Thin Solid Films 517, 62-64 (2008) DOI: 10.1016/j.tsf.2008.08.152

 

G. Chen, G. Vastola, H. Lichtenberger, D. Pachinger, G. Bauer, W. Jantsch, F. Schäffler, and Leo Miglio, "Ordering of Ge islands on hill-patterned Si (001) templates", Applied Physics Letters 92, 113106 (2008) DOI: 10.1063/1.2898522

 

M. Brehm, T. Suzuki, Z. Zhong, T. Fromherz, J. Stangl, G. Hesser, S. Birner, F. Schäffler, and G. Bauer, "Bandstructure and photoluminescence of SiGe islands with controlled Ge concentration", Microelectronics Journal 39, 485-488 (2008) DOI: 10.1016/j.mejo.2007.07.111

 

M. Schramboeck, A.M. Andrews, P. Klang, W. Schrenk, G. Hesser, F. Schäffler, and G. Strasser, "InAs/AlGaAs QDs for intersubband devices", Superlattices and Microstructures 44, 411-415 (2008) DOI: 10.1016/j.spmi.2007.10.010

 

K. Koike, T. Itakura, T. Hotei, M Yano, H. Groiss, G. Hesser, and F. Schäffler, "Thermal precipitation of self-organized PbTe quantum dots in CdTe host matrix", physica status solidi (c) 5, 2746-2749 (2008) DOI: 10.1002/pssc.200779163

 

M. Brehm, M. Grydlik, H. Lichtenberger, T. Fromherz, N. Hrauda, W. Jantsch, F. Schäffler, and G. Bauer, "Quantitative determination of Ge profiles across SiGe wetting layers on Si (001)", Applied Physics Letters 93, 121901 (2008) DOI: 10.1063/1.2988261

 

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T. Berer, D. Pachinger, G. Pillwein, M. Mühlberger, H. Lichtenberger, G. Brunthaler, F. Schäffler, "Lateral quantum dots in Si/SiGe realized by a Schottky split-gate technique", Semicond. Sci. Technol. 22, 137-139 (2007)

 

Z. Wilamowski, H. Malissa, F. Schäffler, W. Jantsch, "g-Factor Tuning and Manipulation of Spins by an Electric Current", Phys. Rev. Lett. 98, 187203-1/4 (2007)

 

T. M. Burbaev, V. A. Kurbatov, H. Lichtenberger, M. M. Rzaev, N. N. Sibeldin, F. Schäffler, V. A. Tsvetkov, "Electron-hole liquid in Si/SiGe heterostructures", in: Proceedings of the 28th International Conference on the Physics of Semiconductors, Vienna, Austria, 24-28 July 2006 (AIP Conference Proceedings Vol. 893), eds.: W. Jantsch, F. Schäffler, Melville, NY, pp. 441-442 (2007)

 

M. V. Kovalenko, M. I. Bodnarchuk, R. T. Lechner, G. Hesser, F. Schäffler, W. Heiss, "Fatty acid salts as stabilizers in size- and shape-controlled nanocrystal synthesis: the case of inverse spinel iron oxide", J. Am. Chem. Soc. 129, 6352-6353 (2007)

 

K. Koike, H. Harada, T. Itakura, Mi. Yano, W. Heiss, H. Groiss, E. Kaufmann, G. Hesser and F. Schäffler, "Photoluminescence characterization of PbTe/CdTe quantum dots grown by lattice-type mismatched epitaxy", Journal of Crystal Growth 301-302, 722-725 (2007)

 

H. Groiss, W. Heiss, F. Schäffler, R. Leitsmann, F. Bechstedt, K. Koike, H. Harada and M. Yano, "The coherent {1 0 0} and {1 1 0} interfaces between rocksalt-PbTe and zincblende-CdTe", Journal of Crystal Growth 301-302, 671-675 (2007)

 

W. Heiss, H. Groiss, E. Kaufmann, G. Hesser, M. Böberl, G. Springholz, and F. Schäffler, R. Leitsmann, F. Bechstedt, K. Koike, H. Harada, and M. Yano, "Quantum dots with coherent interfaces between rocksalt-PbTe and zincblende-CdTe", J. Appl. Phys. 101, 081723 (2007)

 

D. Pachinger, H. Lichtenberger, and F. Schäffler, "Self - Organized Si Dots On Ge Substrates", AIP Conf. Proc. 893, 87 (2007)

 

G. Chen, H. Lichtenberger, G. Bauer, W. Jantsch, and F. Schäffler, "Ordering of Strained Ge Islands on Prepatterned Si(001) Substrates: Morphological Evolution and Nucleation Mechanisms", AIP Conf. Proc. 893, 39 (2007)

 

R. Leitsmann, F. Bechstedt, H. Groiss, F. Schäffler, W. Heiss, K. Koike, H. Harada and M. Yano, "Structural and electronic properties of PbTe (rocksalt)/CdTe (zinc-blende) interfaces", Applied Surface Science 254, 397-400 (2007)

 

H. Groiss, E. Kaufmann, G. Springholz, T. Schwarzl, G. Hesser, F. Schäffler, W. Heiss, Koike, T. Itakura, T. Hotei, M. Yano, T. Wojtowicz, "Size control and midinfrared emission of epitaxial PbTe/CdTe quantum dot precipitates grown by molecular beam epitaxy", Appl. Phys. Lett. 91, 222106 (2007)

 

D. Pachinger, H. Groiss, H. Lichtenberger, J. Stangl, G. Hesser, and F. Schäffler, "Stranski-Krastanow growth of tensile strained Si islands on Ge (001)", Appl. Phys. Lett. 91, 233106 (2007)

 

Z. Zhong, W. Schwinger, F. Schäffler, G. Bauer, G. Vastola, F. Montalenti, and L. Miglio, "Delayed Plastic Relaxation on Patterned Si Substrates: Coherent SiGe Pyramids with Dominant {111} Facets", Phys. Rev. Lett. 98, 176102 (2007)

 

G. Chen, H. Lichtenberger, G. Bauer, W. Jantsch, and F. Schäffler, "Initial stage of the two-dimensional to three-dimensional transition of a strained SiGe layer on a pit-patterned Si(001) template", Phys. Rev. B 74, 035302 (2006)

 

Z. Zhong, H. Lichtenberger, G. Chen, M. Mühlberger, C. Schelling, J. Myslivecek, A. Halilovic, J. Stangl, G. Bauer, W. Jantsch and F. Schäffler, "Ordered SiGe islands on vicinal and pre-patterned Si(001) substrates", Microelectronic Engineering 83, 1730-1735 (2006)

 

W. Heiss, E. Kaufmann, M. Böberl, T. Schwarzl, G. Springholz, G. Hesser, F. Schäffler, K. Koike, H. Harada, M. Yano, R. Leitsman, L. E. Ramos, F. Bechstedt, "Highly luminescent nanocrystal quantum dots fabricated by lattice-type mismatched epitaxy", Physica E: Low-dimensional Systems and Nanostructures 35, 241-245 (2006)

 

M. V. Kovalenko, E. Kaufmann, D. Pachinger, J. Roither, M. Huber, J. Stangl, G. Hesser, F. Schäffler, and W. Heiss, "Colloidal HgTe Nanocrystals with Widely Tunable Narrow Band Gap Energies: From Telecommunications to Molecular Vibrations", J. Am. Chem. Soc. 9 VOL. 128, NO. 11, 3516-3517 (2006)

 

W. Heiss, H. Groiss, E. Kaufmann, G. Hesser, M. Böberl, G. Springholz, and F. Schäffler K. Koike, H. Harada, and M. Yano, "Centrosymmetric PbTe/CdTe quantum dots coherently embedded by epitaxial precipitation", Appl. Phys. Lett. 88, 192109 (2006)

 

G. Bauer, F. Schäffler, "Self-assembled Si and SiGe nanostructures: New growth concepts and structural analysis", phys. stat. sol. (a) 203, No. 14 (2006)