IR-ON phase II (2009-2012)

Déborah Alvarenga, UFMG- Federal University of Minas Gerais, Brazil

Infrared absorption of quantum dots, P11, 04/2008-04/2009

Gerald Bastard, Ecole normale Superieur, Paris

Calculation of quantum dot relaxation, P11 and P03, 01/2009-02/2009, 01/2010-02/2010

Monica Bollani, CNR-INFM and LNESS, Como, Italy

SiGe growth of nanostructures on templates, P02 and P07, 7/2009

Cristiano Ciuti, Université Paris Diderot-Paris 7 and CNRS

Materials and Quantum Phenomena Laboratory MPQ), Strong coupling in intersubband transitions, P11, 03/2010-04/2010

Stanislav Danis, Charles University of Prague, Czech Republic

X-ray analysis of quantum dots and nanowires, P07, 10/2008

Riccardo Gatti and Davide Colombo, Politecnico di Milano, Italy

Modelling of relaxation and dislocation formation in SiGe nanostructures, P02 and P07, 2/2009-3/2009

Vaclav Holý, Charles University of Prague, Czech Republic

X-ray analysis of quantum dots and nanowires, P07, 7/2008 and 7/2009

Petr Klenovsky, Masaryk University, Brno, Czech Republic

Photoluminescence investigations of SiGe quantum dots, P12, 11/2010-2/2011

Silver chalcogenide nanocrystals, P05, 1/2010-3/2010

Marina Leontiadou, Advanced Technology Institute, University of Surrey, Guildford, England

Optical and structural characterization of strained lead salt quantum well systems, P04, 6/2010

Patricia Lustoza de Souza, PUC University Rio de Janeiro, Brazil

Indium phosphide quantum dot devices, P11 and P03, 10/2010-01/2011

Johan Persson, Technical University of Denmark

Structural characterization of nanostructures, P07, 10/2010

Olivia Pulci, Università di Roma ‘Tor Vergata’, Italy

Excitons in nanostructures, P06, 10/2010-11/2010

Chunxia Wang, Academy of Sciences, Beijing, China

Design and fabrication of photonic band gap crystals, P05, 05/2011-10/2011

Yu Yao, Princeton University

Nonlinearity in Quantum Cascade Lasers, P11 and P03, 06/2009-07/2009

IR-ON phase I (2005-2009)

Déborah Alvarenga, UFMG- Federal University of Minas Gerais, Brazil

Infrared absorption of quantum dots, P11, 03/2007-06/2007 and 04/2008-04/2009

Gerald Bastard, Ecole normale Superieur, Paris

Calculation of quantum dot relaxation, P11 and P03, 10/2006 and 01/2008

Phillippe Boucaud, Institut d'Electronique Fondamentale, Paris

Time resolved measurements in quantum dots, P11, 02/2007

James Heyman, Macalester College, St. Paul MN, USA

THz Spectroscopy of Nanostructures, P11/ P03, 04/2008,

Vaclav Holý, Charles University Prague

Calculations of Diffracted X-Ray Intensities from 3d Ge Dot Crystals in Si, P07, 06/2007, 01/2008

Elaine Lalanne, University of Maryland

Time resolved measurements, P11, 04/2007

Patricia Lustoza de Souza, PUC University Rio de Janeiro

Indium phosphide quantum dot devices, P11/ P03, 10/2005 -05/2006, 06/2007 and 12/2007-01/2008

Martin Mixa, Charles University Prague

Kinetic Monte Carlo Simulation of IV-VI Compound Island Growth, P04, 10.09.2006-17.11.2006 and 05.06.2007 -18.06.2007

Elodie Strupiechonski, Univ. Paris Denis Diderot

Quantum dot characterization, P03, 07/07 - 08/07

Guglielmo Vastola, University of Milano-Bicocca

Simulation of Lattice Strain of Ge Island Growth on Patterned Si Substrates, P07 and P02, 16.09.07 – 15.12.07

Yu Yao, Princeton University

Nonlinearity in Quantum Cascade Lasers, P11 and P03, 06/2009-07/2009