Next generation x-ray techniques - J. Stangl, G. Bauer


S. Yakunin, M. Sytnyk, D. Kriegner, S. Shrestha, M. Richter, G. J. Matt, H. Azimi, C. J. Brabec, J. Stangl, M. V. Kovalenko, W. Heiss, "Detection of X-ray photons by solution-processed lead halide perovskites", Nature Photonics (online May 26th, 2015), DOI: 10.1038/NPHOTON.2015.82 with P05


T. Etzelstorfer, M. Ahmadpor Monazam, S. Cecchi, D. Kriegner, D. Chrasstina, E. Gatti, E. Grilli, N. Rosemann, S. Chatterjee, V. Holý, F. Pezzoli, G. Isella, J. Stangl, "Structural investigations of the alpha12 SiGe superstructure", J. Appl. Cryst. 48 (2015), 262-268; DOI:10.1107/S1600576715000849


M. Keplinger, B. Mandl, D. Kriegner, V. Holý, L. Samuelson, G. Bauer, K. Deppert, J. Stangl, "X-ray diffraction strain analysis of a single axial InAS1-xPx nanowire segment", Journal of Synchrotron Radiation 22, 59-66 (2015); DOI:10.1107/S160057751402284X


M. Sytnyk, E. D. Głowacki, S. Yakunin, G. Voss, W. Schöfberger, D. Kriegner, J. Stangl, R. Trotta, C. Gollner, S. Tollabimazraehno, G. Romanazzi, Z. Bozkurt, M. Havlicek, N. S. Sariciftci, W. Heiss, "Hydrogen-bonded organic semiconductor micro- and nanocrystals: From colloidal syntheses to (opto-)electronic devices.", JACS 136, 16522−16532 (2014); DOI: 10.1021/ja5073965 with P05


L. Protesescu, A.J. Rossini, D. Kriegner, M. Valla, A. de Kargommeaux, M. Walter, K.V. Kravchyk, M. Nachtegaal, J. Stangl, B. Malaman, P. Reiss, A. Lesage, L. Emsley, Ch. Coperet, M.V. Kovalenko, “Unraveling the Core-Shell Structure of Ligand-Capped Sn/SnOx Nanoparticles by Surface Enhanced Nuclear Magnetic Resonance, Mössbauer and X-Ray Absorption Spectroscopies”, ACS Nano 8, 2639–2648 (2014); DOI: 10.1021/nn406344n


Y. Huo, B. Witek, S. Kumar, J. Cardenas, J. Zhang, N. Akopian, R. Singh, E. Zallo, R. Grifone, D. Kriegner, R. Trotta, F. Ding, J. Stangl, V. Zwiller, G. Bester, A. Rastelli, O. Schmidt, “A light-hole exciton in a quantum dot”, Nature Physics 10, 46–51 (2014); DOI:10.1038/nphys2799


M.Sytnyk, R.Kirchschlager, M. Bodnarchuk, D.Primetzhofer, D.Kriegner, H.Enser, J.Stangl, P.Bauer, M.Voith, A.Hassel, F.Krumeich, F.Ludwig, A.Meingast, G.Kothleitner, M.Kovalenko, W.Heiß, “Tuning the Magnetic Properties of Metal Oxide Nanocrystal Heterostructures by Cation Exchange”,  Nano Lett. 13, 586–593 (2013); DOI: 10.1021/nl304115r


T. Etzelstorfer,   M.J.  Süess,   G.L.  Schiefler,   V.L.R.  Jacques,   D. Carbone,   D. Chrastina,   G. Isella,   R. Spolenak,   J.  Stangl,   H. Sigg, A. Diaz, “Scanning x-ray strain microscopy of inhomogeneously strained Ge micro-bridges”, J. Synchrotron Radiation 21, 111–118 (2013); DOI:10.1107/S1600577513025459


D. Kriegner, S. Assali, A. Belabbes, T. Etzelstorfer,V. Holý, T. Schülli, F. Bechstedt, E.P.A.M. Bakkers, G. Bauer, J. Stangl, “Unit cell structure of the wurtzite phase of GaP nanowires: X-ray diffraction studies and density functional theory calculations”, Phys. Rev. B 88, 115315 (2013); DOI: 10.1103/PhysRevB.88.115315


D. Kriegner, J.M. Persson, T. Etzelstorfer, D. Jacobsson, J. Wallentin, J.B. Wagner, K. Deppert, M.T. Borgström, J. Stangl, "Structural investigation of GaInP nanowires using X-ray diffraction", Thin Solid Films 543, 100–105 (2013); DOI: 10.1016/j.tsf.2013.02.112


N. Hrauda, J.J. Zhang, H. Groiss, T. Etzelstorfer, V. Holý, G. Bauer, C. Deiter, O.H. Seeck, J. Stangl, “Strain relief and shape oscillations in site-controlled coherent SiGe islands”, Nanotechnology 24, 335707 (2013); DOI: 10.1088/0957-4484/24/33/335707


D. Kriegner, E. Wintersberger, J. Stangl, “xrayutilities: a versatile tool for reciprocal space conversion of scattering data recorded with linear and area detectors”, J. Appl. Cryst. 46, 1162-1170 (2013); DOI: 10.1107/S0021889813017214


N. Hrauda, J. J. Zhang, H. Groiss, J. C. Gerharz, T. Etzelstorfer et al., "Closely spaced SiGe barns as stressor structures for strain-enhancement in silicon", Appl. Phys. Lett. 102, 032109 (2013); DOI: 10.1063/1.4789507


N. Hrauda, J. Zhang, M. Süess, E.Wintersberger, V. Holy, J. Stangl, C. Deiter, O. H. Seeck, G. Bauer, "Strain distribution in Si capping layers on SiGe islands: influence of cap thickness and footprint in reciprocal space", Nanotechnology 23, 465705/1-10 (2012) DOI: 10.1088/0957-4484/23/46/465705


E. Lausecker, M. Grydlik, M. Brehm, I. Bergmair, M. Mühlberger, T. Fromherz, G. Bauer, "Anisotropic remastering for reducing feature sizes on UV nanoimprint lithography replica molds" Nanotechnology 23, 165302/1-5 (2012) DOI:10.1088/0957-4484/23/16/165302


N.A. Katcho, M.-I. Richard, M.G. Proietti, H. Renevier, C. Leclere, V. Favre-Nicolin, J.J. Zhang, G. Bauer, "Diffraction anomalous fine structure study and atomistic simulation of Ge/Si nanoislands", Nucl. Instrum. Meth. B 284, 58-63 (2012) DOI: 10.1016/j.nimb.2011.08.003


M. Yarema, S. Pichler, D. Kriegner, J. Stangl, O. Yarema, R. Kirchschlager, S. Tollabimazraehno, M. Humer, D. Häringer, M. Kohl, G. Chen, and W. Heiss, "From highly monodisperse indium and indium tin colloidal nanocrystals to self-assembled indium tin oxide nanoelectrodes", ACS Nano 6, 4113 (April 2012) DOI: 10.1021/nn3005558


J. Cervenka, H. Kosina, S. Selberherr, J. Zhang, N. Hrauda, J. Stangl, G. Bauer, G. Vastola, A. Marzegalli, L. Miglio, "Strained MOSFETs on ordered SiGe dots", Solid-State Electronics 65–66, 81–87 (2011) DOI: 10.1016/j.sse.2011.06.041


D. Kriegner, M. Keplinger, J. Stangl, A.M. Andrews, P. Klang, B. Mandl, T. Mårtensson, M. Borgstrom, K. Deppert, L. Samuelson, G. Strasser, G. Bauer, "Determination of the wurtzite content and orientation distribution of nanowire ensembles", MRS Proceedings 1206, 1206-M11-39 (2011) DOI: 10.1557/PROC-1206-M11-39


P. Godard, G. Carbone, M. Allain, F. Mastropietro, G. Chen, L. Capello, A. Diaz, T.H. Metzger, J. Stangl and V. Chamard, "Three-dimensional high-resolution quantitative microscopy of extended crystals", Nature Communications 2, 568 (2011) DOI: 10.1038/ncomms1569


G. Vastola, M. Grydlik, M. Brehm, T. Fromherz, G. Bauer, F. Boioli, L. Miglio, and F. Montalenti, "How pit facet inclination drives heteroepitaxial island positioning on patterned substrates", Phys. Rev. B 84, 155415 (2011), DOI: 10.1103/PhysRevB.84.155415 


C. Panse, D. Kriegner, F. Bechstedt, "Polytypism of GaAs, InP, InAs, and InSb: An ab initio study", Phys. Rev. B 84, 075217/1-9 (2011), DOI: 10.1103/PhysRevB.84.075217


B. Mandl, A. W. Dey, J. Stangl, M. Cantoro, L.-E. Wernersson, G. Bauer, L. Samuelson, K. Deppert, C. Thelander, "Self-seeded, position-controlled InAs nanowire growth on Si: a growth parameter study", J. Crystal Growth 334, 51-56 (2011) DOI: 10.1016/j.jcrysgro.2011.08.023


J. Zhang, A. Rastelli, O. G. Schmidt, G. Bauer, "Role of the wetting layer for the SiGe Stranski-Krastanow island growth on planar and pit-patterned substrates", Semicond. Sci. Technol. 26, 014028/1-5 (2011) DOI: 10.1088/0268-1242/26/1/014028



N. Hrauda, J. Zhang, E. Wintersberger, T. Etzelstorfer, B. Mandl, J. Stangl, D. Carbone, V. Holý, V. Jovanović, C. Biasotto, L. K. Nanver, J. Moers, D. Grützmacher and G. Bauer, "X-ray nanodiffraction on a single SiGe quantum dot inside a functioning field-effect transistor", Nano Lett. 11 (7), 2875-2880 (2011) DOI: 10.1021/nl2013289

Featured in Nature Nanotechnology's research highlight section of July, DOI: 10.1038/nnano.2011.117


D. Kriegner, C. Panse, B. Mandl, K. A. Dick, M. Keplinger, J. M. Persson, P. Caroff, D. Ercolani, L. Sorba, F. Bechstedt, J. Stangl, G. Bauer, "Unit Cell Structure of Crystal Polytypes in InAs and InSb Nanowires", Nano Letters 11, 1483-1489 (2011) DOI: 10.1021/nl1041512

B. Mandl, K. A. Dick, D. Kriegner, M. Keplinger, G. Bauer, J. Stangl, and K. Deppert, "Crystal structure control in Au-free self-seeded InSb wire growth", Nanotechnology 22, 145603 (2011) DOI: 10.1088/0957-4484/22/14/145603


J. J. Zhang, A. Rastelli, O. G. Schmidt, and G. Bauer, "Compositional evolution of SiGe islands on patterned Si (001) substrates", Appl. Phys. Lett. 97, 203103 (2010), DOI: 10.1063/1.3514239


J. J. Zhang, F. Montalenti, A. Rastelli, N. Hrauda, D. Scopece, H. Groiss, J. Stangl, F. Pezzoli, F. Schäffler, O. G. Schmidt, L. Miglio, and G. Bauer, "Collective Shape Oscillations of SiGe Islands on Pit-Patterned Si(001) Substrates: A Coherent-Growth Strategy Enabled by Self-Regulated Intermixing", Phys. Rev. Lett. 105, 16 , 166102 (2010) DOI: 10.1103/PhysRevLett.105.166102  


A. Diaz, C. Mocuta, J. Stangl, M. Keplinger, T. Weitkamp, F. Pfeiffer, C. David, T. H. Metzger and G. Bauer, "Coherence and wavefront characterization of Si-111 monochromators using double-grating interferometry",  J. Synchrotron Rad. (2010). 17, 299-307 DOI: 10.1107/S0909049510004644


A. Diaz, V. Chamard, C. Mocuta, R. Magalhães-Paniago, J. Stangl, D. Carbone, T. H. Metzger and G. Bauer, "Imaging the displacement field within epitaxial nanostructures by coherent diffraction: a feasibility study", New Journal of Physics 12 (2010) 035006 DOI: 10.1088/1367-2630/12/3/035006


V. Chamard, J. Stangl, D. Carbone, A. Diaz, G. Chen, C. Alfonso, C. Mocuta, T.H. Metzger, "Three-dimensional X-Ray Fourier Transform Holography: the Bragg case", Phys. Rev. Lett. 104, 165501 (2010), DOI: 10.1103/PhysRevLett.104.16550


M. Keplinger et al., "Core-shell Nanowires: From the ensemble to single-wire characterization", Nuclear Inst. and Methods in Physics Research B 268, 316-319 (2010) DOI: 10.1016/j.nimb.2009.09.043


M. Meduna, O. Caha, M. Keplinger, J. Stangl, G. Bauer, G. Mussler, D. Grützmacher, "Interdiffusion in Ge rich SiGe/Ge multilayers studied by in situ diffraction", Phys. Status Solidi A 206, 1775-1779 (2009) DOI: 10.1002/pssa.200881595

J. Stangl, C. Mocuta, A. Diaz, T. H. Metzger, G. Bauer, "X-ray diffraction as a local probe tool", ChemPhysChem 10 (2009), 2923-2930 DOI: 10.1002/cphc.200900563

J. J. Zhang, N. Hrauda, H. Groiss, A. Rastelli, J. Stangl,  F. Schäffler, O. G. Schmidt, G. Bauer, "Strain engineering in Si via closely stacked, site-controlled SiGe islands", Appl. Phys. Lett. 96, 193101/1-3 (2010) DOI: 10.1063/1.3425776


T. Fromherz, J. Stangl, R.T. Lechner, E. Wintersberger, G. Bauer, V. Holy, C. Dais, E. Müller, H. Sigg, H.H. Solak, D. Grützmacher, "3D Sige Quantum Dot Crystals: Structural Characterization and Electronic Coupling", International Journal of Modern Physics B 23, 2836 (2009) DOI: 10.1142/S0217979209062414


M. Brehm, F. Montalenti, M. Grydlik, G. Vastola, H. Lichtenberger, N. Hrauda, M. J. Beck, T. Fromherz, F. Schäffler, L. Miglio, and G. Bauer, "Key role of the wetting layer in revealing the hidden path of Ge/Si(001) Stranski-Krastanow growth onset", Phys. Rev. B 80, 205321 (2009), DOI: 10.1103/PhysRevB.80.205321 


V. Chamard, A. Diaz, J. Stangl, S. Labat, "Stuctural investigation of InAs nanowires with coherent X-rays", J. Strain Analysis 44, 533-542 (2009) DOI: 10.1243/03093247JSA573


A. Diaz, C. Mocuta, J. Stangl, B. Mandl, C. David, J. Vila-Comamala, V. Chamard, T. H. Metzger, and G. Bauer, "Coherent diffraction imaging of a single epitaxial InAs nanowire using a focused x-ray beam", Phys. Rev. B 79, 125324 (2009), DOI: 10.1103/PhysRevB.79.125324

Featured in: Virtual Journal of Nanoscale Science & Technology, April 13, 2009 ( 


J. J. Zhang, A. Rastelli, H. Groiss, J. Tersoff, F. Schaffler, O. G. Schmidt, and G. Bauer, "Shaping site-controlled uniform arrays of SiGe/Si(001) islands by in situ annealing",  Appl. Phys. Lett. 95, 183102 (2009), DOI: 10.1063/1.3258648 


M.-I. Richard, T. U. Schülli, G. Renaud, E. Wintersberger, G. Chen, G. Bauer, V. Holy, "In situ x-ray scattering study on the evolution of Ge island morphology and relaxation for low ghrowth rate: Advanced transition to superdomes",  Phys. Rev. B 80, 045313/1-9 (2009) DOI: 10.1103/PhysRevB.80.045313


A. Diaz, C. Mocuta, J. Stangl, J. Vila-Comamala, Ch. David, T.H. Metzger, G. Bauer, "Spatially resolved strain within a single SiGe island investigated by X-ray scanning microdiffraction", physica status solidi (a), 1-4 (2009), DOI: 10.1002/pssa.200881594


M. Brehm, T. Suzuki, T. Fromherz, Z. Zhong, N. Hrauda, F. Hackl, J. Stangl, F. Schäffler, G. Bauer, "Combined structural and photoluminescence study of SiGe islands on Si substrates: comparison with realistic energy level calculations", New Journal of Physics 11, 063021/1-15 (2009) DOI: 10.1088/1367-2630/11/6/063021


O.M. Yefanov, A.V. Zozulya, I.A. Vartanyants, J. Stangl, C. Mocuta, T.H. Metzger, G. Bauer, T. Boeck, M. Schmidbauer, "Coherent Diffraction Tomography of Nanoislands from Grazing-Incidence Small-Angle X-ray Scattering", Appl. Phys. Lett. 94, 123104 (2009) DOI: 10.1063/1.3103246


M. Keplinger, T. Mårtensson, J. Stangl, E. Wintersberger, B. Mandl, D. Kriegner, V. Holý, G. Bauer, K. Deppert, L. Samuelson, "Structural investigations of core-shell nanowires using grazing incidence x-ray diffraction", NanoLetters 9, 1877-1882 (2009), DOI: 10.1021/nl803881b


N. Hrauda, J.J. Zhang, J. Stangl, A. Rehman-Khan, G. Bauer, M. Stoffel, O. G. Schmidt, V. Jovanovich and L.K. Nanver, "X-Ray Investigation of Buried SiGe Islands for Devices with Strain-Enhanced Mobility", J. Vac. Sci. Technol. B Volume 27, Issue 2, pp. 912-918 DOI: 10.1116/1.3056178 (Proceedings ICN+T08, International Conference on Nanoscience and Technology, July 21-25, 2008, Keystone, Colorado USA)


N. Hrauda, J. J. Zhang, M. Stoffel, J. Stangl, G. Bauer, A. Rehman-Khan, V. Holý, O. G. Schmidt, V. Jovanovic, L. K. Nanver, "X-ray diffraction study of the composition and strain fields in buried SiGe islands", Eur. Phys. J. Special Topics 167, 3-10 (2009) DOI: 10.1140/epjst/e2009-00934-7

F. Pezzoli, E. Bonera, E. Grilli, M. Guzzi, S. Sanguinetti, D. Chrastina, G. Isella, H. von Känel, E. Wintersberger, J. Stangl, G. Bauer, "Raman spectroscopy determination of composition and strain in Si1-xGex/Si heterostructures", Microelectronic Engineering 11/5-6, 279-284 (2008), DOI: 10.1016/j.mssp.2008.09.012


M.-I. Richard, V. Favre-Nicolin, G. Renaud, T. U. Schülli, C. Priester, Z. Zhong, T.-H. Metzger, "Multiple scattering effects in strain and composition analysis of nanoislands by grazing incidence x-rays", Appl. Phys. Lett. 94, 013112/1-3 (2009) DOI: 10.1063/1.3064157


T. U. Schülli, G. Vastola, M.-I. Richard, A. Malachias, G. Renaud, F. Uhlik, F. Montalenti, G. Chen, L. Miglio, F. Schäffler, G. Bauer, "Enhanced relaxation and intermixing in Ge islands grown on pit-patterned Si(001) substrates", Phys. Rev. Lett. 102, 025502/1-4 (2009) DOI: 10.1103/PhysRevLett.102.025502


V. Holý, J. Stangl, T. Fromherz, R.T. Lechner, E. Wintersberger, G. Bauer, C. Dais, E. Müller, D. Grützmacher, "X-ray diffraction investigation of a three-dimensional Si/SiGe quantum dot crystal", Phys. Rev. B 79, 035324 (2009), DOI: 10.1103/PhysRevB.79.035324

Featured in Virtual Journal of Nanoscale Science & Technology, Vol. 19(6), February 9, (2009)


J. Stangl, "Vermessung einzelner Nanoinseln", Physik in unserer Zeit 1/2009, 46 (2009) DOI:10.1002/piuz.200801189


F. Pezzoli, E. Bonera, E. Grilli, M. Guzzi, S. Sanguinetti, D. Chrastina, G. Isella, H. von Känel, E. Wintersberger, J. Stangl, G. Bauer, "Phonon strain shift coefficients in Si1-xGex alloys", J. Appl. Phys. 103, 093521-1/4 (2008) DOI: 10.1063/1.2913052


M. Brehm, T. Suzuki, Z. Zhong, T. Fromherz, J. Stangl, G. Hesser, S. Birner, F. Schäffler, G. Bauer, "Bandstructure and photoluminescence of SiGe islands with controlled Ge concentration", Microelectronics Journal 39, 485-488 (2008) DOI: 10.1016/j.mejo.2007.07.111


A. V. Zozulya, O. M. Yefanov, I. A. Vartanyants, K. Mundboth, C. Mocuta, T. H. Metzger, J. Stangl, G. Bauer, T. Boeck, M. Schmidbauer, "Imaging of nanoislands by coherent GISAXS experiments", ESRF Highlights 2008, 75-76 (2008)


C. Mocuta, J. Stangl, K. Mundboth, T. H. Metzger, G. Bauer, I. A. Vartaniants, M. Schmidbauer, T. Boeck, "Beyond the ensemble average: x-ray microdiffraction analysis of single SiGe islands", Phys. Rev. B 77, 245425-1/5 (2008) DOI: 10.1103/PhysRevB.77.245425


D. Pachinger, H. Lichtenberger, G. Chen, J. Stangl, G. Hesser, and F. Schäffler, "MBE growth conditions for Si island formation on Ge (001) substrates", Thin Solid Films 517, 62-64 (2008) DOI: 10.1016/j.tsf.2008.08.152


V. Holy, J. Stangl, R. T. Lechner, G. Springholz, "X-ray scattering from periodic arrays of quantum dots", J. Phys.: Condens. Matter 20, 454215/1-6 (2008) DOI: 10.1088/0953-8984/20/45/454215




Z. Zhong, P. Chen, Z. Jiang, and G. Bauer, "Temperature dependence of ordered GeSi island growth on patterned Si (001) substrates", Appl. Phys. Lett. 93, 043106 (2008), DOI:10.1063/1.2965484


A.V. Zozulya, O. M. Yefanov I.A. Vartanyants, K. Mundboth, C. Mocuta, T.H. Metzger, J. Stangl, G. Bauer, T. Boeck, M. Schmidbauer, "Imaging of nanoislands in coherent grazing-incidence small-angle x-ray scattering experiments", Phys. Rev. B 78 (Rapid Commun) 2008, DOI:10.1103/PhysRevB.78.121304


F. Pezzoli, E. Bonera, E. Grilli, M. Guzzi, S. Sanguinetti, D. Chrastina, G. Isella, H. von Känel, E. Wintersberger, J. Stangl, G. Bauer, "Phonon strain shift coefficients in Si1-xGex alloys", J. Appl. Phys. 103, 093521-1/4 (2008)


V. Chamard, J. Stangl, St. Labat, B. Mandl, R. T. Lechner and T. H. Metzger, "Evidence of stacking fault distribution along an InAs nanowire using micro-focussed coherent x-ray diffraction", J. Appl. Cryst. 41, 272-280 (2008)


M.-I. Richard, G. Chen, T. U. Schülli, G. Renaud, G. Bauer, "Coalescence of domes and superdomes at a low growth rate or during annealing: towards the formation of flat-top superdomes", Surface Science 602, 2157-2161, (2008)


V. Holy, K. Mundboth, C. Mocuta, T. H. Metzger, J. Stangl, G. Bauer, T. Boeck, M. Schmidbauer, "Structural characterization of self-assembled semiconductor islands by three-dimensional x-ray diffraction mapping in reciprocal space", Thin Solid Films 516, 8022-8028 (2008)


I. A.Vartanyants, A. V. Zozulya, K. Mundboth, O. M. Yefanov, M.-I. Richard, E. Wintersberger, J. Stangl, A. Diaz, C. Mocuta, T. H. Metzger, G. Bauer, T. Boeck, M. Schmidbauer, "Crystal truncation planes revealed by three-dimensional reconstruction of reciprocal space", Phys. Rev. B 77, 115317 (2008)


Th. Martensson, J. B. Wagner, E. Hilner, A. Mikkelsen, C. Thelander, J. Stangl, B. J. Ohlsson, A. Gustafsson, E. Lundgren, L. Samuelson, W. Seifert, "Epitaxial growth of Indium Arsenide nanowires on Silicon using nucleation templates formed by self-assembled organic coatings", Adv. Mater. 19, 1801-1806 (2007)


J. J. Zhang, M. Stoffel, A. Rastelli, O. G. Schmidt, V. Jovanovic, L. K. Nanver, G. Bauer, "SiGe growth on patterned Si(001) substrates: surface evolution and evidence of modified island coarsening", Appl. Phys. Lett. 91, 173115 (2007)


M. Stoffel, A. Rastelli, J. Stangl, T. Merdzhanova, G. Bauer, O. G. Schmidt, "Shape oscillations: a walk through the phase diagram of strained island", Phys. Rev. B, 113307 (2007)


M. Meduna, J. Novak, G. Bauer, V. Holy, C.V. Falub, S. Tsujino, D. Grutzmacher, "In situ investigations of Si and Ge interdffusion in Ge-rich Si/SiGe multilayers using x-ray scattering", Semicond. Sci. Technol. 22, 447-453 (2007)


A. Rehman Khan, J. Stangl, G. Bauer, D. Buca, B. Holländer, H. Trinkaus, S. Mantl, R. Loo, M. Caymax, "Study of relaxation of strain in patterned Si/SiGe structures using an x-ray diffraction technique", Semicond. Sci. Technol. 22, 212-215 (2007)


D. Grützmacher, T. Fromherz, C. Dais, J. Stangl, E. Müller, Yasin Ekinci, Harun H. Solak, Hans Sigg, Rainer T. Lechner, Eugen Wintersberger, Stefan Birner, Václav Holý, Günther Bauer, "Three-Dimensional Si/Ge Quantum Dot Crystals", Nano Letters 7/10, 3150-3156 (2007)


D. Pachinger, H. Groiss, H. Lichtenberger, J. Stangl, G. Hesser, F. Schäffler, "Stranski-Krastanow growth of tensile strained Si islands on Ge (001)", Appl. Phys. Lett. 91, 233106/1-3 (2007)


M. V. Kovalenko, E. Kaufmann, D. Pachinger, J. Roither, M. Huber, J.Stangl, G. Hesser, F. Schäffler, W. Heiss, "Colloidal HgTe Nanocrystals with widely tunable narrow band gap energies: from telecommunications to molecular vibrations", J. Am. Chem. Soc. 128, 3516-3517 (2006)


T. U. Schülli, M.-I. Richard, G. Renaud, V. Favre-Nicolin, E. Wintersberger, G. Bauer. "In situ investigation of the island nucleation of Ge on Si„001… using x-ray scattering methods". Appl. Phys. Lett. 89, 143114 (2006)


B. Mandl, J. Stangl, Th. Martensson, A. Mikkelsen, J. Eriksson, L. S. Karlsson, G. Bauer, L. Samuelson, W. Seifert, "Au-Free Epitaxial Growth of InAs Nanowires", Nano Letters 6/8, 1817-1821 (2006)


G. Bauer, F. Schäffler, "Self-assembled Si and SiGe nanostructures: New growth concepts and structural analysis", phys. stat. sol. (a) 203, No. 14 (2006)


R. T. Lechner, G. Springholz, T. U. Schülli, J. Stangl, T. Schwarzl, G. Bauer, "Strain Induced Changes in the Magnetic Phase Diagram of Metamagnetic Heteroepitaxial EuSe=PbSe1 xTex Multilayers", Phys. Rev. Lett. 94, 157201 (2005)


I. A. Vartanyants, I. K. Robinson, J. D. Onken, M. A. Pfeifer, G. J. Williams, F. Pfeiffer, H. Metzger, Z. Zhong, G. Bauer, "Coherent x-ray diffraction from quantum dots", Phys. Rev. B 71, 245302 (2005)


Z. Zhonga, O. G. Schmidt G. Bauer, " Increase of island density via formation of secondary ordered islands on pit-patterned Si (001) substrates", Appl. Phys. Lett. 87, 133111 (2005)


J. Novák, V. Holý, J. Stangl, T. Fromherz, Zhenyang Zhong, Gang Chen, G. Bauer, B. Struth, "Ge/Si islands in a three-dimensional island crystal studied by x-ray diffraction", J. Appl. Phys. 98, 073517 (2005)


J. Novák, V. Holý, J. Stangl, G. Bauer, E. Wintersberger, S. Kiravittaya, O G Schmidt, "A method for the characterization of strain fields in buried quantum dots using x-ray standing waves", J. Phys. D: Appl. Phys. 38. A137–A142 (2005)



Reviews and book contributions


V. Holy, J. Stangl, G. Bauer, "Diffuse x-ray scattering from semiconductor nanostructures", in: "Diffuse Scattering and the Fundamental Properties of Materials", eds.: R. I. Barabash and G.  E. Ice, ISBN: 978-1-60650-000-2, Oak Ridge National Laboratory, Momentum Press, New Jersey, pp. 35-62 (2009)


Z. Zhong, G. Bauer, O.G. Schmidt, "One-, two-, and three-dimensionally ordered GeSi islands grown on prepatterned Si (001) substrates", in: "Lateral alignment of epitaxial quantum dots", Springer Series on Nanoscience and -technology", ed. O. G. Schmidt, series editors: P. Avouris, K. v. Klitzing, H. Sakaki, R. Wiesendanger, Springer (2007)


IR-ON Office
Johanna Rodehau-Noack, B.A.

1040 Vienna, Austria Gusshausstr. 27-29
1040 Vienna, Austria


FWF der Wissenschaftsfonds Logo