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Research Highlight: Continuous Voltage Tunability of Intersubband Relaxation Times ... |
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Friday, 06 March 2009 |
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... in Coupled Quantum Well Structures P. Rauter, T. Fromherz, N. Q. Vinh, B. N. Murdin, G. Mussler, D. Grützmacher, and G. Bauer Phys. Rev. Lett. 102, 147401 (2009), DOI:10.1103/PhysRevLett.102.14 Control of the non-radiative transition lifetime in SiGe based semiconductor heterostructures was achieved by biasing with an applied electric field. Carrier lifetimes were measured by picosecond time-resolved experiments using a free electron laser. By changing the applied voltage, the intersubband hole relaxation times for quantum well structures were varied by a factor of two as the wavefunctions and their overlaps were tuned. The range of magnitudes for the lifetime indicate a possible route to silicon-based quantum cascade lasers. |
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austrian nanoYOUTH award for DI Elisabeth Lausecker |
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Friday, 28 November 2008 |
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DI Elisabeth Lausecker, PhD Student at Institut für Halbleiter- und Festkörperphysik (JKU Linz) received one of the austrian nanoYOUTH awards 2008 |
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Kerstin Hummer in Der Standard |
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Wednesday, 12 November 2008 |
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Kerstin Hummer was invited to contribute an article to the series “Wissen macht Worte” of the Austrian daily newspaper Der Standard. derstandard.at (German only) pdf (German only) |
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